high voltage transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 300 vdc collectorbase voltage v cbo 300 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b =0) v (br)ceo 300 e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 300 e vdc emitterbase breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 6.0 e vdc collector cutoff current (v cb = 200 vdc, i e = 0) i cbo e 0.1 m adc emitter cutoff current (v eb = 6.0 vdc, i c = 0) i ebo e 0.1 m adc 1. pulse test: pulse width 300 s; duty cycle 2.0%. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 2 1 publication order number: bf393/d bf393 case 2904, style 1 to92 (to226aa) 1 2 3 collector 3 2 base 1 emitter
bf393 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) h fe 25 40 e e e collectoremitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v ce(sat) e 2.0 vdc baseemitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v be(sat) e 2.0 vdc smallsignal characteristics currentgain e bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 20 mhz) f t 50 e mhz common emitter feedback capacitance (v cb = 60 vdc, i e = 0, f = 1.0 mhz) c re e 2.0 pf
bf393 http://onsemi.com 3 figure 1. dc current gain i c , collector current (ma) 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 c, capacitance (pf) figure 2. capacitances v r , reverse voltage (volts) 0.2 100 50 20 1.0 c cb 10 2.0 5.0 0.5 1.0 2.0 5.0 10 20 50 100 200 c eb figure 3. currentgain e bandwidth product i c , collector current (ma) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 100 70 50 30 20 10 t j = 25 c v ce = 20 v f = 20 mhz f, current-gain bandwidth product (mhz) t 1.0 i c , collector current (ma) figure 4. aono voltages v, voltage (volts) 1.4 0 t j = 25 c v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v be(sat) @ i c /i b = 10 1.2 1.0 0.8 0.6 0.4 0.2 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 v ce , collector-emitter voltage (volts) i c , collector current (ma) mpsa43 figure 5. maximum forward bias safe operating area current limit thermal limit (pulse curves @ t c = 25 c) second breakdown limit mpsa42 100 m s 1.0 ms t c = 25 c t a = 25 c curves apply below rated v ceo 500 0.5 1.0 2.0 5.0 10 20 50 100 200 100 50 20 10 5.0 2.0 1.0 0.5 200 500 10 m s 100 ms
bf393 http://onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector case 02904 (to226aa) issue ad on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bf393/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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